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savantic semiconductor product specification silicon npn power transistors 2SD1717 d escription with to-3pl package complement to type 2sb1162 excellent linearity of h fe wide area of safe operation (aso) high transition frequency f t applications for high power amplifier applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 160 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i cm collector current-peak 20 a 3.5 p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2SD1717 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =8a ;i b =0.8a 2.0 v v be base-emitter voltage i c =8a ; v ce =5v 1.8 v i cbo collector cut-off current v cb =160v; i e =0 50 a i ebo emitter cut-off current v eb =3v; i c =0 50 a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe-2 dc current gain i c =1a ; v ce =5v 60 200 h fe-3 dc current gain i c =8a ; v ce =5v 20 f t transition frequency i c =0.5a ; v ce =5v 20 mhz c ob collector output capacitance f=1mhz;v cb =10v 210 pf h fe-2 classifications q s p 60-120 80-160 100-200 downloaded from: http:///
savantic semiconductor product specification 3 silicon npn power transistors 2SD1717 package outline fig.2 outline dimensions (unindicated tolerance:0.50 mm) downloaded from: http:///

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